Dr. Ajay Kumar

Assistant Professor (Senior Grade)

ajay.kumar@jiit.ac.in

EDUCATIONAL QUALIFICATIONS

Ph.D. from Delhi Technological University (DTU), Delhi, INDIA, 2019.
M. Tech. from Delhi Technological University (DTU), Delhi, INDIA, 2014.
B. Tech. in Electronics & Communication Engineering, UPTU, 2009.

BIOGRAPHY

Dr. Ajay Kumar has been included in the World's Top 2% Scientists 2023 list, compiled by Stanford University and published by Elsevier.

Currently Assistant Professor (Sr. Grade) in Electronics and Communication Engineering Department in Jaypee Institute of Information Technology (JIIT), Noida, Sec-62.

Junior Research Fellow in DST, SERB Fast Track Project in Microelectronics Research Lab, Delhi Technological University Delhi, INDIA (July 2014-July 2016).

Visiting faculty in department of Engg. Physics in Delhi Technological University, Delhi. (2014-2016).

Visiting faculty in department of Electronics and Communication in Netaji Subhash University of Technology (NSUT), Delhi. (Jan-May, 2018).

RESEARCH INTEREST

Semiconductor Device Modeling and Simulation such as Nanoscale MOSFET, FinFET, TFET, SiNW MOSFET, Solar Cells, Nanophotonic Devices.

TEACHING/RESEARCH EXPERIENCE

12 Years +

PUBLICATIONS

Patent

Comparative Investigation of Band Gap and Gate Metal Engineered Novel Si0.2Ge0.8/GaAs Charge Plasma-Based JLTFET for Improved Electrical Performance- 202411079858 (Published).
Electrical Performance Improvement of Charge Plasma-Based Junctionless TFET UsingNovel Coalescence of SiGe/GaAs and Heterogeneous Gate Dielectric- 202411079783 (Published).
Analog/Rf Performance Analysis of A Novel Si0.9Ge0.1/InAs Charge Plasma Based Junctionless TFET- 202411085778 (Published).
Malware Attack Detection Using Machine Learning Techniques- 202411088107 (Published).
Optimizing Rf Parameters in Novel Si1-Xgex/GaAs JLFET Through Ge Mole Fraction Variation- 202411087990 (Published).
Face Recognition Based on Pre-Trained Convolutional Neural Network and Machine Learning for Attendance Automation- 202411088108 (Published).
Impact of Work Function on Electrical Performance Of Novel Si1-Xgex/GaAs Junctionless TFET- 202411088922 (Published).
Optimizing Spacer Width In N-Type Lateral Hetero-Structure Junctionless TFETs- 202411088923(Published).
Performance Enhancement Of 6t and 9t SRAM Using 90 Nm Technology- 202411088921 (Published).

Book

A. Kumar Goyal and A. Kumar, Eds., ‘Recent Advances and Trends in Photonic Crystal Technology’. IntechOpen, Feb. 05, 2024. doi: 10.5772/intechopen.1001122.

Book Chapters

A. Kumarand A. Kumar Goyal, ‘Introductory Chapter: Photonic Crystal Technology – Introduction, Advantage, and Applications’, Recent Advances and Trends in Photonic Crystal Technology. IntechOpen, Mar. 06, 2024. doi: 10.5772/intechopen.1003942.
Srivastava, P.K., Kumar, A., Kumar, A. (2023). Concentration-Dependent Assessment of GaAs Junctionless FinFET (JLFinFET) with High-k Spacer. In: Singh, S.N., Mahanta, S., Singh, Y.J. (eds) Proceedings of the NIELIT's International Conference on Communication, Electronics and Digital Technology. NICE-DT 2023. Lecture Notes in Networks and Systems, vol 676. June 2023. Springer, Singapore. https://doi.org/10.1007/978-981-99-1699-3_26.
Kumar, A., Choudhary, M., Jain, A., Gupta, N. (2023). Safe Distance Monitoring for COVID-19 Using YOLOv3 Object Recognition Paradigm. In: Singh, S.N., Mahanta, S., Singh, Y.J. (eds) Proceedings of the NIELIT's International Conference on Communication, Electronics and Digital Technology. NICE-DT 2023. Lecture Notes in Networks and Systems, vol 676. June 2023. Springer, Singapore. https://doi.org/10.1007/978-981-99-1699-3_9.
A. Kumar, A. Kumar Goyal,M. Roy, N. Gupta, M. M. Tripathi, and R. Chaujar, “Detection of Hazardous Analyte Using Transparent Gate Thin Film Transistor”, Micro-Electronics and Telecommunication Engineering. Lecture Notes in Networks and Systems, vol 106. pp. 97-204. Springer Nature, 2019.DOI:https://doi.org/10.1007/978-981-15-2329-8_20.
N. Gupta, A. Kumar, R. Chaujar, Static and CV Analysis of Gate Engineered GAA Silicon Nanowire MOSFET for High-Performance Applications. Energy Systems, Drives and Automations. Lecture Notes in Electrical Engineering, vol 664, pp.59-68. (2020) Springer, Singapore. https://doi.org/10.1007/978-981-15-5089-8_6.

International Journals

A. Kumar. ^“Effect of Trench Depth and Gate Length Shrinking Assessment on the Analog and Linearity Performance of TGRC-MOSFET” Superlattices and Microstructures, Elsevier, Volume 109, September 2017, Pages 626-640. DOI: 10.1016/j.spmi.2017.05.045. (IF: 2.658).
A. Kumar.“Palladium-based Trench Gate MOSFET for Highly Sensitive Hydrogen Gas Sensor”, in Materials Science in Semiconductor Processing, Elsevier. Volume 120, December 2020, Pages 105274. DOI: https://doi.org/10.1016/j.mssp.2020.105274.(IF: 3.927).
A. Kumar, “Assessment of High-ᴋ Gate Stacked In₂O₅Sn Gate Recessed Channel MOSFET for X-Ray Radiation Reliability”, in Engineering Research Express, IOP. Vol. 2(3), pp. 035017. 2020. DOI: https://doi.org/10.1088/2631-8695/abaf0a. (IF: 1.5).
Agrwal, P. and Kumar, A., Comprehensive Analysis of In 0.53 Ga 0.47 As SOI-FinFET for Enhanced RF/Wireless Performance. Frontiers in Electronics, 6, p.1497940.(IF: 1.9)
Soni, P., Jain, A., Kumar, K., Soni, L.K., Kumar, A., Gupta, N., Goyal, A.K. and Saroha, R., 2025. Implementation and Comprehensive Investigation of Gate Engineered Si0. 1Ge0. 9/GaAs Charged Plasma Based JLTFET for Improved Analog/RF Performance. Results in Engineering, p.104069. (IF: 6.0)
Rajawat, V.S., Kumar, A. and Choudhary, B., 2025. TCAD simulation of sub-10 nm high-k SOI GaN FinFET by implementing fin optimization approach for high-performance applications. Analog Integrated Circuits and Signal Processing, 122(1), pp.1-12. (IF: 1.2)
A. Jain, Y. G. Wang, A. Kumar, N. Gupta, K. Kumar, & A. K. Goyal, (2025). BiFeO3-Based Lead-Free Materials: Recent Breakthroughs and their Multifunctional Applications. Journal of Alloys and Compounds, Vol. 1010, 177170. (IF: 5.8)
Saini, J., Kumar, A., & Goyal, A. K. (2024, December). Performance Analysis of Chirped Graded Photonic Crystal Resonator for Biosensing Applications. Photonics (Vol. 11, No. 12, p. 1173). MDPI.
N. Singh, A. Kumar, A. Srivastava, N. Yadav, R. Singh, A. S. Verma, ... & H. Zheng, (2024). Challenges and Opportunities in Engineering of Next Generation 3D Microelectronic Devices: Improved Performance, Higher Integration Density. Nanoscale Advances. Vol. 6, Pages 6044-6060.(IF: 4.6)
P. Agrwal, & A. Kumar, (2024). Reliability Investigation of Interfacial Defects in InGaAs-SOI-FinFET for High-Performance Applications. Indian Journal of Pure & Applied Physics (IJPAP) Vol. 62, Issue 11, Pages 1004-1011. (IF: 0.8)
R. Kumar, A. Kumar, A. Jain, & A.K. Goyal, (2024). Nanograting-assisted flexible Triboelectric Nanogenerator for active human motion detection. Nano Energy, 131, 110318. (IF: 16.8)
M. S. Narula, A. Pandey, & A. Kumar, (2024). Gate Electrode Work Function Engineered Nanowire FET with High Performance and Improved Process Sensitivity. Journal of Electronics and Informatics, 6(1), 66-76. (Scopus)
K. Kumar, A. Kumar, V. Kumar, A. Jain, S. C. Kumar. Band Gap and Gate Dielectric Engineered Novel Si0. 9Ge0. 1/InAs Junctionless TFET for RFIC Applications. Engineering Research Express IOP, Vol. 6, pp-035340. Aug. 2024. (IF: 1.5)
P. Agrwal, A. Kumar. Performance Assessment of InGaAs-SOI-FinFET for Enhancing Switching Capability Using High-k Dielectric. Memories-Materials, Devices, Circuits and Systems. 2024 Jul 2:100117.
VS Rajawat, B. Choudhary, A. Kumar. Performance Assessment of High-k SOI GaN FinFET with Different Fin Aspect Ratio for RF/Wireless Applications. Wireless Personal Communications. 2024 Jun 25:1-6.(IF: 1.9)
A. Jain , A. Kumar, N. Gupta, K. Kumar, AK Goyal, YG Wang. Synergetic improvement in energy storage performance and dielectric stability in lead-free 0.75 BaTi0. 85Zr0. 15O3–0.25 Sr0. 7La0. 2TiO3 relaxor ceramic. Journal of Materials Science: Materials in Electronics. 2024 Jul;35(19):1298.(IF: 2.8)
N. Gupta, R. Gupta, A. Jain, R. Gupta, B. Choudhary, K. Kumar, A. K. Goyal, Y. Massoud, A. Kumar. Lead-free perovskite Cs2NaGaBr6 n-i-p solar cell for higher power conversion efficiency to improved energy storage performance. Energy Storage. 2024; 6(4):e665. doi:10.1002/est2.665. (IF: 3.6)
K. Sagar, A. Kumar, Novel silicon nanoparticle-based optical sensor to confine bloch surface wave for optical applications. Opt Quant Electron 56, 981 (2024). https://doi.org/10.1007/s11082-024-06840-7. (IF: 3.3)
R. Gupta, A. Kumar, M. Kumar, R. Singh, A. Gehlot, PS Pandey, N. Yadav, K. Pandey, A. Yadav, N. Gupta, R. Brajpuriya. The integration of microelectronic and photonic circuits on a single silicon chip for high-speed and low-power optoelectronic technology. Nano Materials Science. 2024 May 10.(IF: 12.6)
A Jain, A Kumar, N Gupta, K Kumar. Advancements and challenges in BaTiO3-Based materials for enhanced energy storage. Materials Today: Proceedings. 2024 May 11.(Scopus Indexed)
A Jain, R Saroha, A Kumar, N Gupta, K Kumar. Advancements and challenges in solid-state lithium-ion batteries: From ion conductors to industrialization. Materials Today: Proceedings. 2024 May 11.(Scopus Indexed).
PK Srivastava, A Kumar, A Kumar, Reliability analysis of a CNT-TF-FinFET for hostile temperature, e-Prime-Advances in Electrical Engineering, Electronics and Energy, 6, 100374.
A.K. Goyal, A. Kumar, Y.Massoud, "Performance analysis of heterostructure-based topological nanophotonic sensor". Scientific Reports 13 (1), 19415 (2023). https://doi.org/10.1038/s41598-023-46784-8. (IF: 3.8)
K. Sagar and A. Kumar, "Various Applications-Based Optimized DBR Structure With Effect of Different Material Systems," in IEEE Transactions on Nanotechnology, vol. 22, pp. 763-768, 2023, doi: 10.1109/TNANO.2023.3329161. (IF: 2.4)
A. Kumar, N. Gupta, A. Jain, R. Gupta, B. Choudhary, K. Kumar, A. K. Goyal, and Y. Massoud. "Digital-logic assessment of junctionless twin gate trench channel (JL-TGTC) MOSFET for memory circuit applications." Memories-Materials, Devices, Circuits and Systems, Elsevier, (2023): 6, 100087.
V. S. Rajawat, A. Kumar, B. Choudhary, “Impact on DC and analog/RF performances of SOI based GaN FinFET considering high-k gate oxide”, Memories - Materials, Devices, Circuits and Systems, Elsevier, 2023, 5, 100079 ISSN 2773-0646, https://doi.org/10.1016/j.memori.2023.100079.
M.M. Tripathi, A. Kumar, Small-Signal Modeling of GaN-BTG MOSFET for Wireless Applications. Wireless Pers Commun (2023). https://doi.org/10.1007/s11277-023-10720-w. 132 (3), 2243-2253 (IF: 2.2)
A. Jain, A. Kumar, N. Gupta, K. Kumar and Y.G. Wang. Optimizing Electrical, Magnetic, and Magnetoelectric Characteristics of Ba0.85Sr0.15TiO3–Ni0.75Zn0.25Fe2O4 Core-Shell Ceramic. Journal of Electronic Materials, Springer, 52, 5210–5217 (2023). https://doi.org/10.1007/s11664-023-10538-z. (IF: 2.1)
K. Kumar, A. Kumar, V. Kumar, A. Jain & SC Sharma, Ambipolarity Suppression of Band Gap and Gate Dielectric Engineered Novel Si_0.2Ge_0.8/GaAs JLTFET Using Gate Overlap Technique. Silicon (2023). https://doi.org/10.1007/s12633-023-02624-y. 15 (18), 7837-7854 (IF: 2.941).
K. Kumar, A. Kumar, V. Kumar, & SC Sharma, “Band Gap and Gate Underlap Engineered Novel Si0. 2Ge0. 8/GaAs JLTFET with Dual Dielectric Gate for Improved Wireless Applications." AEU-International Journal of Electronics and Communications, Elsevier, Volume 166, July 2023, 154671. (IF: 3.183.
A. Kumar, A. Jain, and N. Gupta. "Optimal design and performance assessment of CH3NH3SnBr3 lead-free perovskite solar cells for> 24% efficiency." Indian Journal of Physics, Springer (2023): 97 (12), 3447-3457. (IF: 1.778).
A. Kumar,A. K. Goyal,. " Temperature-dependent analysis of heterojunction-free GaN FinFET through optimization of controlling gate parameters and dielectric materials" International Journal of Materials Research, 2023. https://doi.org/10.1515/ijmr-2021-8668. 114 (7-8), 732-737 (IF: 0.748).
A. Kumar,A. K. Goyal,. "Sensitivity assessment of dielectric modulated GaN material based SOI-FinFET for label-free biosensing applications" International Journal of Materials Research, 2023.https://doi.org/10.1515/ijmr-2021-8666. 114 (7-8), 725-731 (IF: 0.748).
K. Sagar, and A. Kumar. "Assessment of Bloch surface wave-based one-dimensional photonic crystal sensor using ultraviolet range." Journal of Nanophotonics 17, no. 1 (2023): 016009. (IF: 1.18).
K. Kumar, A. Kumar, V. Kumar, & SC Sharma. Comparative Investigation of Band Gap and Gate Metal Engineered Novel Si0. 2Ge0. 8/GaAs Charge Plasma-Based JLTFET for Improved Electrical Performance. Silicon, 15 (11), 4689-4702, (2023). (IF: 2.941).
A. Kumar, A. Jain, N. Gupta. "Perovskite organic tandem solar cell: A design towards improved efficiency." Materials Today: Proceedings (2023).(Scopus Indexed).
A. Kumar,A. Jain, N. Gupta . Numerical simulation of Transparent Gate Thin-Film Transistor (TG-TFT) with varied gate materials for high-performance applications. Materials Today: Proceedings (2023).(Scopus Indexed).
K. Sagar, and A. Kumar. "Surface wave-based 1D-PhC sensor using barium sodium niobate film thickness." Materials Today: Proceedings (2023).(Scopus Indexed).
A. Kumar, N. Gupta, A. Jain, A. K. Goyal, and Y. Massoud. "Numerical assessment and optimization of highly efficient lead-free hybrid double perovskite solar cell" Results in Optics, Elsevier,Volume 11, May 2023, 100387. https://doi.org/10.1016/j.rio.2023.100387.(Scopus Indexed).
K. Kumar, A. Kumar, A. & S.C. Sharma, “Electrical performance improvement of charge plasma-based junctionless TFET using novel coalescence of SiGe/GaAs and heterogeneous gate dielectric. Applied Physics. A, Springer, 129, 23 (2023).https://doi.org/10.1007/s00339-022-06309-y. (IF: 2.584).
A. Jain, A. Kumar, N. Gupta, and Y.G. Wang. "Emergence of magnetic and magnetoelectric characteristics (1-x) BaTi0. 88Zr0. 12O3-xNi0. 75Co0. 25Fe2O4 dual phase ceramics." Journal of Alloys and Compounds, Elsevier. (2022): 930, 167298. (IF: 6.371).
K. Kumar, A. Kumar, V. Mishra, and S.C. Sharma. “Implementation of Band Gap and Gate Oxide Engineering to Improve the Electrical Performance of SiGe/InAs Charged Plasma-Based Junctionless-TFET”. Silicon (2022). https://doi.org/10.1007/s12633-022-02111-w. 15 (3), 1303-1313 (IF: 2.941).
A.K. Goyal, A. Kumar, Y.Massoud, “Performance Analysis of DAST Material-Assisted Photonic-Crystal-Based Electrical Tunable Optical Filter”. Crystals 2022, 12, 992. https://doi.org/10.3390/ cryst12070992. (IF: 2.67)
A. Kumar, P. Gahlaut, and N. Gupta, "Highly efficient tin oxide-based colloidal lead sulfide quantum dot solar cell”. Energy Storage. 2023; 5(2):e331. doi:10.1002/est2.331. (IF: 3.2).
A.K. Goyal, A. Kumar, Y.Massoud, “Thermal Stability Analysis of Surface Wave Assisted Bio-Photonic Sensor”. Photonics 2022, 9, 324. https://doi.org/10.3390/photonics9050324. (IF: 2.676)
A. Kumar, N. Gupta, A. K. Goyal, and Y. Massoud. "Comprehensive Power Gain Assessment of GaN-SOI-FinFET for Improved RF/Wireless Performance Using TCAD." Micromachines 13, no. 9 (2022): 1418. https://doi.org/10.3390/mi13091418.(IF: 3.523)
A. Kumar,U. Gupta, N. Gupta, and A. K. Goyal. "Numerical Assessment of Highly Efficient Tin-Halide Perovskite Solar Cell." In IOP Conference Series: Materials Science and Engineering, vol. 1225, no. 1, p. 012016. IOP Publishing, 2022. doi:10.1088/1757-899X/1225/1/012016.(Scopus Indexed).
N. Gupta, A. Jain, and A. Kumar^“Hot Carrier Reliability Assessment of Vacuum Gate Dielectric Trench MOSFET (TG-VacuFET)” The European Physical Journal - Plus (EPJ Plus) Springer, Vol. 137, 517, 28 April 2022. DOI: 10.1140/epjp/s13360-022-02745-0 (IF:3.911).
N. Gupta and A. Kumar, “Influence of GaN/ZrO2 interfacial layer defects on 8-nm GaN-SOI-FinFET for reliable RFIC design." AEU-International Journal of Electronics and Communications 144 (2022): 154045.(IF: 3.183)
A. Jain, A. Kumar and N. Gupta, "Significant Improvement in Magnetic and Magnetoelectric Characteristics of (0.95 − x)Ba0.9Ca0.1TiO3-0.05Na0.5Bi0.5TiO3-xCoFe2O4Ceramics," in IEEE Transactions on Magnetics, vol. 58, no. 2, pp. 1-14, Feb. 2022, Art no. 2501114, doi: 10.1109/TMAG.2021.3131511.) (IF: 1.7).
N. Gupta, A. Jain and A. Kumar “20nm GAA-GaN/Al2O3 Nanowire MOSFET for Improved Analog/Linearity Performance Metrics and Suppressed Distortion”, Applied Physics A, Springer. Vol.127 , pp.530 , 2021. https://doi.org/10.1007/s00339-021-04673-9. (IF: 2.584).
A. Jain, A. Kumar, N. Gupta, and V. Kumar, “Superior energy storage performance coupled with excellent electrical characteristics in lead-free Ba0.8Ca0.2TiO3-(Bi0.80Mg0.20) (Ti0.65Mg0.30)O3 ceramics” Journal of Physics D: Applied Physics, IOP. 54.49 (2021): 495504.. DOI 10.1088/1361-6463/ac24cb. (IF: 3.207).
A. Kumar, and U. Gupta, “Numerical Assessment of High-Efficiency Lead-Free Perovskite Solar Cells”, Materials Today: Proceeding, Elsevier.Volume 45, Part 6, 2021, Pages 5041-5046 (Scopus Indexed). https://doi.org/10.1016/j.matpr.2021.01.541.(Scopus Indexed).
A. Kumar, S. D. Saurbh and H. Sharma, “Perovskite-CIGS Materials Based Tandem Solar Cell with an Increased Efficiency of 27.5%”, Materials Today: Proceeding, Elsevier.Volume 45, Part 6, 2021, Pages 5047-5051 (Scopus Indexed). https://doi.org/10.1016/j.matpr.2021.01.565.(Scopus Indexed).
N. Gupta, and A. Kumar “Numerical assessment of high-k spacer on symmetric S/D underlap GAA junctionless accumulation mode silicon nanowire MOSFET for RFIC design”, Applied Physics A, Springer. Vol. 127, pp.76, 2021. https://doi.org/10.1007/s00339-020-04234-6. (IF: 2.584).
N. Gupta, and A. Kumar, “Assessment of High-k Gate Stack on Sub-10nm SOI-FinFET for High-Performance Analog and RF Applications Perspective”, in ECS Journal of Solid State Science and Technology. Vol. 9 (12), pp. 123009. DOI 10.1149/2162-8777/abcf14.(IF: 2.142)
A. Kumar, A. K. Goyal, and N. Gupta, “Thin-Film Transistors (TFTs) for Highly Sensitive Biosensing Applications: A Review”, in ECS Journal of Solid State Science and Technology. Vol. 9 (11), pp. 115022. DOI 10.1149/2162-8777/abb2b3. (IF: 2.142)
A. Kumar,U. Gupta, Tanya,R. Chaujar, M.M. Tripathi, andN. Gupta, “Simulation of Perovskite Solar Cell Employing ZnO as Electron Transport Layer (ETL) for Improved Efficiency”, Materials Today: Proceeding, Elsevier.Volume 46, Part 4, 2021, Pages 1684-1687. https://doi.org/10.1016/j.matpr.2020.07.267. (Scopus Indexed).
A. K. Goyal, A. Kumar, "Recent advances and progresses in photonic devices for passive radiative cooling application: a review," Journal of Nanophotonics. 14(3), 030901 (2020), doi: 10.1117/1.JNP.14.030901. (IF: 1.415)
A. Kumar, N. Gupta, M. M. Tripathi and R. Chaujar, “Reliability of Sub-20 nm Black Phosphorus Trench (BP-T) MOSFET in High-Temperature Harsh Environment”, in Silicon, Springer Nature, 13, 1277–1283 (2021) https://doi.org/10.1007/s12633-020-00531-0. (IF: 2.67).
P. M. Tripathi, H. Soni, R. Chaujar and A. Kumar. "Numerical Simulation and Parametric Assessment of GaN Buffered Trench Gate MOSFET for Low Power Applications." IET Circuits, Devices & Systems Vol. 14, Issue 6, September 2020, p. 915 – 922 (2020) DOI: 10.1049/iet-cds.2020.0041. (IF: 1.277)
A. Kumar, N. Gupta,M. Roy, M. M. Tripathi, and R. Chaujar, “Dielectric Modulated Transparent Gate Thin Film Transistor for Biosensing Applications”, Materials Today: Proceeding, Elsevier. Vol. 28, 2020, Pages 141-145. https://doi.org/10.1016/j.matpr.2020.01.453(Scopus Indexed)
A. Kumar, A. K. Goyal, U. Gupta, Tanya,N. Gupta,and R. Chaujar, “Increased Efficiency of 23% for CIGS Solar Cell by Using ITO as Front Contact”, Materials Today: Proceeding, Elsevier. Vol. 28, 2020, Pages 361-365. (Scopus Indexed)
A. Kumar, S. K. Tripathi, N. Gupta, M. M. Tripathi and R. Chaujar, “Performance Evaluation of Linearity and Intermodulation Distortion of Nanoscale GaN-SOI FinFET for RFIC Design” AEUInternational Journal of Electronics and Communication, Elsevier. Vol. 115, 2020. (IF: 3.183)
N. Gupta, A. Kumar, and R. Chaujar,” Design Considerations and Capacitance Dependent Parametric Assessment of Gate Metal Engineered SiNW MOSFET for ULSI Switching Applications”, Silicon, Springer Nature, Vol. 12, pp. 1501-1510, 2020. https://doi.org/10.1007/s12633-019-00246-x. (IF: 2.67).
A. Kumar, N. Gupta, M. M. Tripathi and R. Chaujar, “Analysis of Structural Parameters on Sensitivity of Black Phosphorus Junctionless Recessed Channel MOSFET for Biosensing Application”, in Microsystem Technologies, Springer Nature. Vol. 26, pp. 2227–2233, 2020.DOI: 10.1007/s00542-019-04545-6. (IF: 2.276)
A. Kumar, M. M. Tripathi and R. Chaujar^“Sub-30nm In2O5Sn Gate Electrode Recessed Channel MOSFET: A Biosensor for Early Stage Diagnostics” Vacuum, Elsevier. Vol. 164, pp. 46-52, 2019. DOI: 10.1016/j.vacuum.2019.02.054.(IF: 4.11).
A. Chhabra, A. Kumar and R. Chaujar, “Sub-20nm GaAs Junctionless FinFET for Biosensing Application”, Vacuum, Elsevier. Vol. 160, pp. 467-471, 2019. DOI: 10.1016/j.vacuum.2018.12.007. (IF: 4.11).
A. Kumar, N. Gupta, MM Tripathi, and R. Chaujar, “RF Noise Modeling of Black Phosphorus Junctionless Trench MOSFET in Strong Inversion Region”, Superlattices and Microstructures. Vol. 125, pp. 72-79, 2019. DOI: 10.1016/j.spmi.2018.10.025. (IF: 2.658).
A. Kumar, MM Tripathi, and R. Chaujar^“Reliability Issues of In ₂ O ₅ Sn Gate Electrode Recessed Channel MOSFET: Impact of Interface Trap Charges and Temperature” IEEE Transactions on Electron Devices, Vol.65, Issue 3, pp 860-866. DOI: 10.1109/TED.2018.2793853. (IF: 3.221)
A. Kumar, B. Tiwari, S. Singh, MM Tripathi, and R. Chaujar^“Radiation Analysis of N-Channel TGRC-MOSFET: An X-Ray Dosimeter” IEEE Transactions on Electron Devices. Vol.65, pp 5014-5020, 2018.DOI: 10.1109/TED.2018.2869536.(IF: 3.221)
A. Kumar, MM Tripathi, and R. Chaujar^“Ultralow-power dielectric-modulated nanogap-embedded sub-20-nm TGRC-MOSFET for biosensing applications” Journal of Computational Electronics, Springer Nature. Vol 17, pp 1807-1815.DOI: 10.1007/s10825-018-1237-2.(IF: 1.983)
A. Kumar, MM Tripathi, and R. Chaujar^“In₂O₅Sn Based Transparent Gate Recessed Channel MOSFET: RF Small-Signal Model for Microwave Applications” AEUInternational Journal of Electronics and Communication, Elsevier Vol 93, Issue 9, pp 233–241. DOI: 10.1016/j.aeue.2018.06.014. ISSN: 1434-8411(IF: 3.183).
A. Kumar, MM Tripathi, and R. Chaujar^“Comprehensive Analysis of Sub-20nm Black Phosphorus Based Junctionless-Recessed Channel MOSFET for Analog/RF Applications” Superlattices and Microstructures, Elsevier Volume 116, April 2018, Pages 171-180. DOI: 10.1016/j.spmi.2018.02.018. (IF: 2.658)
A. Kumar, N. Gupta and R. Chaujar, “Effect of Structured Parameters on the Hot-Carrier Immunity of Transparent Gate Recessed Channel (TGRC) MOSFET”, in Microsystem Technologies, Springer Nature, September 2017, Volume 23, Issue 9, pp 4057–4064. DOI: 10.1007/s00542-016-2918-z. (IF: 2.276).
A. Kumar, MM Tripathi, and R. Chaujar^“Investigation of Parasitic Capacitances of In₂O₅Sn Gate Electrode Recessed Channel MOSFET for ULSI Switching Applications” Microsystem Technologies, SpringerNature, Vol 23, Issue 12, pp 5867–5874, 2017. DOI: 10.1007/s00542-017-3348-2. (IF: 2.276)
A. Kumar, N. Gupta and R. Chaujar^“Power gain assessment of ITO based Transparent Gate Recessed Channel (TGRC) MOSFET for RF/Wireless Applications” Superlattices and Microstructures, Elsevier, vol. 91 pp.290-301, 2016, ISSN: 0749-6036. DOI: 10.1016/j.spmi.2016.01.027. (IF: 2.658)
A. Kumar, N. Gupta and R. Chaujar^“TCAD RF Performance Investigation of Transparent Gate Recessed Channel MOSFET” Microelectronics Journal, Elsevier, Vol. (49), pp. 36-42, 2016. DOI: 10.1016/j.mejo.2015.12.007.(IF: 1.992)
A. Kumar, N. Gupta and R. Chaujar, “Analysis of Novel Transparent Gate Recessed Channel (TGRC) MOSFET for Improved Analog Behaviour”, in Microsystem Technologies, Springer Nature, 2015, vol. 22(11) pp. 2665-2671. doi:10.1007/s00542-015-2554-z. ISSN: 0946-7076. (IF: 2.276)
N. Gupta, A. Kumar and R. Chaujar,” Oxide Bound Impact on Hot-Carrier Degradation for Gate Electrode Workfunction Engineered (GEWE) Silicon Nanowire MOSFET”, in Microsystem Technologies, Springer Nature, 2015. Vol. 22 (11), pp. 2655-2664. doi: 10.1007/s00542-015-2557-9. ISSN: 0946-7076. (IF: 2.276).
N. Gupta, A. Kumar and R. Chaujar, “Impact of Device Parameter Variation on RF performance of Gate Electrode Workfunction Engineered (GEWE)-Silicon Nanowire (SiNW) MOSFET”, Journal of Computational Electronics, Springer Nature, Vol. 14(3), pp. 798-810, 2015. DOI: 10.1007/s10825-015-0715-z. ISSN: 1569-8025. DOI: 10.1007/s10825-015-0715-z.(IF: 1.807).
A. Kumar, N. Gupta and R. Chaujar, “Investigation Of Frequency Dependence On The Noise Response of a Novel Transparent Gate Recessed Channel MOSFET”, International Journal of Electrical and Electronics Engineers, Vol.6, no. 2, Dec, 2014, ISSN: 2321-2055 (online). (IF: 2.7)
N. Gupta, A. Kumar and R. Chaujar, “Investigation of Frequency Dependent parameter of GEWE-SiNW MOSFET for Microwave and RF Applications”, International Journal of Advanced Technology in Engineering and Science, Vol. 2, Sept. 2014, ISSN (Online): 2348 – 7550. (IF: 2.870).

International Conference

K. Kumar, A. Parveen, F. Hasan, A. Kumar, A. Jain and V. Kumar, "Malware Attack Detection Using Machine Learning Techniques," 2024 4th Asian Conference on Innovation in Technology (ASIANCON), Pimari Chinchwad, India, 2024, pp. 1-4, doi: 10.1109/ASIANCON62057.2024.10838032.
K. Kumar, D. K. Sachdev, M. Tyagi, A. Kumar, A. Jain and V. Kumar, "Beyond CMOS: Unlocking Low-Power with TFETs," 2024 International Conference on Computer, Electronics, Electrical Engineering & their Applications (IC2E3), Srinagar Garhwal, Uttarakhand, India, 2024, pp. 1-6, doi: 10.1109/IC2E362166.2024.10827587.
Kumar, K., Reddy, C. H., Gupta, M., Kumar, V., Kumar, A., & Jain, A. (2024, August). Optimizing Spacer Width in N-Type Lateral Hetero-Structure Junctionless TFETs. In 2024 International Conference on Electrical Electronics and Computing Technologies (ICEECT) (Vol. 1, pp. 1-5). IEEE.
Kumar, K., Reddy, C. H., Bagla, P., Kumar, V., Kumar, A., & Jain, A. (2024, August). Effect of Dielectrics on the Performance of N-Type Lateral Junctionless TFET. In 2024 International Conference on Intelligent Algorithms for Computational Intelligence Systems (IACIS) (pp. 1-5). IEEE.
Kumar, K., Shukla, G., Karn, B. K., Kumar, A., Jain, A., & Kumar, V. (2024, July). Impact of Work Function on Electrical Performance of Novel Si 1-x Ge x/GaAs Junctionless TFET. In 2024 2nd World Conference on Communication & Computing (WCONF) (pp. 1-5). IEEE.
Kumar, K., Tyagi, A., Lata, Y. R., Kumar, V., Kumar, A., & Jain, A. (2024, July). Performance Enhancement of 6T And 9T SRAM Using 90 nm Technology. In 2024 2nd World Conference on Communication & Computing (WCONF) (pp. 1-5). IEEE.
Agrwal, P., & Kumar, A. (2024, May). Enhancing Radio Frequency Performance of InGaAs-SOI-FinFET Through Optimized Channel Doping Density. In 2024 International Conference on Communication, Computer Sciences and Engineering (IC3SE) (pp. 560-563). IEEE.
Agrwal, P., & Kumar, A. (2024, May). Revolutionizing Semiconductor Technology: A Comprehensive Review of FinFET. In 2024 International Conference on Communication, Computer Sciences and Engineering (IC3SE) (pp. 478-482). IEEE.
Kumar, A., Mahajan, R., Jain, R., Gupta, N., Jain, A., Kumar, K., & Goyal, A. K. (2024, April). Performance Enhancement and Analysis of CH 3 NH 3 3Ge 0.85 Pb 0.125 I 3 Perovskite Solar Cell Towards Higher Efficiency. In 2024 IEEE Third International Conference on Power Electronics, Intelligent Control and Energy Systems (ICPEICES) (pp. 706-709). IEEE.
V. S. Rajawat, A. Kumar and B. Choudhary, "Physical Analysis of Lateral-BTBT Induced GIDL Current in GaN-Based FinFET Devices," 2024 IEEE Open Conference of Electrical, Electronic and Information Sciences (eStream), Vilnius, Lithuania, 2024, pp. 1-5, doi: 10.1109/eStream61684.2024.10542601.
K. Kumar, B. K. Karn, G. Shukla, V. Kumar, A. Kumar and A. Jain, "Unlocking the Tunnel: A Review of Tunnel Field-Effect Transistors Technology," 2024 2nd International Conference on Device Intelligence, Computing and Communication Technologies (DICCT), Dehradun, India, 2024, pp. 1-5, doi: 10.1109/DICCT61038.2024.10532848.
A. Kumar, M. S. Thomas, N. Gupta, A. K. Goyal and Y. Massoud(2023, November). HTL doping density optimization for photovoltaic assessment of Pb-Free Cs2NaGaBr6 nip solar cell. In Photonics for Energy III (Vol. 12763, pp. 32-35). SPIE.
AK Goyal, K. Sagar, A. Kumar, and Y. Massoud. "Theoretical analysis of optical Tamm mode excitation using dielectric nanoparticles." In Nanophotonics and Micro/Nano Optics IX, vol. 12773, pp. 201-204. SPIE, 2023.
A. Kumar, M. S. Thomas, N. Gupta, A. K. Goyal and Y. Massoud, "Enhanced Photovoltaic Assessment of Pb-Free Cs2NaGaBr6 n-i-p Solar Cell by ETL Optimizations," 2023 IEEE 23rd International Conference on Nanotechnology (NANO), Jeju City, Korea, Republic of, 2023, pp. 1002-1005, doi: 10.1109/NANO58406.2023.10231198.
Abhirup Sarkar; Ayushman Khetan; Leonell John; Hussain Sabunwala; Eshan Gupta; Aditya Jain, A. Kumar, N. Gupta., "Design and Development of Dual Loop Motion Control System for BLDC motor," 2023 2nd International Conference for Innovation in Technology (INOCON), Bangalore, India, 2023, pp. 1-6, doi: 10.1109/INOCON57975.2023.10101075.
A. Vaid, V. Kumar and A. Kumar, "Absorber Layer Doping Concentration Optimization of Lead-Free Cs2CuSbCl6 Perovskite Solar Cells for Improved Efficiency," 2023 International Conference on Device Intelligence, Computing and Communication Technologies, (DICCT), Dehradun, India, 2023, pp. 50-53, doi: 10.1109/DICCT56244.2023.10110299.
A. Singh A. Pande; D. Patwa; R. Kalaria; A. Jain; A. Kumar; N. Gupta , "OghmaNano Simulation of PM6:D18:L8-BO Organic Solar Cell and Comparison with other Lesser Efficient Solar Cells," 2023 4th International Conference for Emerging Technology (INCET), Belgaum, India, 2023, pp. 1-4, doi: 10.1109/INCET57972.2023.10170292.
V. Singh Rajawat, B. Choudhary and A. Kumar, "High-k SOI GaN FinFET for High Power and High Frequency Applications," 2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON), Kolkata, India, 2022, pp. 386-390, doi: 10.1109/EDKCON56221.2022.10032945.
K. Kumar, A. Kumar and S. C. Sharma, "Analog/RF Performance Analysis of a Novel Si0.9Ge0.1/InAs Charge Plasma-Based Junctionless TFET," 2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON), Kolkata, India, 2022, pp. 375-379, doi: 10.1109/EDKCON56221.2022.10032951.
A. Kumar,M. S. Thomas, N. Gupta and A. Jain, "Performance Evaluation of Lead-Free Cs2CuSbCl6 Perovskite Solar Cells for > 21.67% Efficiency," 2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), 2022, pp. 215-216, doi: 10.1109/NUSOD54938.2022.9894835.
K. Sagar and A. Kumar, "Numerical Assessment of Bloch Surface Wave 1D-PhC Sensor using Ba2NaNb5O15 Defect Layer," 2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), 2022, pp. 199-200, doi: 10.1109/NUSOD54938.2022.9894814.
A. Kumar,M. S. Thomas, G. Pareek, A. Jain and N. Gupta, "Performance Evolution of GaAs-Based Solar Cell Towards >30% Efficiency for Space Applications" IEEE International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience & Nanotechnology (5NANO 2022) Mangalam College of Engineering, Ettumanoor, Kottayam, Kerala, India. 28th & 29th April, 2022.
A. Kumar, N. Gupta, A. K. Goyal and Y. Massoud "RF Performance Assessment of Sub-8nm GaN-SOI-FinFET Using Power Gain Parameters" IEEE International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience & Nanotechnology (5NANO 2022) Mangalam College of Engineering, Ettumanoor, Kottayam, Kerala, India. 28th & 29th April, 2022.
S. Sahu, M. M. Tripathi and A. Kumar,, "Numerical Simulation of GaN-BTG MOSFET for Suppression of SCEs," 3rd International conference “Devices for Integarted Circuits (DevIC 2021), Kalyani Government Engineering College from May 19-20, 2021. DOI: 10.1109/DevIC50843.2021.9455908.
S. Sahu, M. M. Tripathi and A. Kumar,, "Performance Investigation of Nanoscaled GaN-BTG MOSFET for Analog/Linearity and Low Power Applications" ICTE Sponsored 2021 IEEE International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience & Nanotechnology (5NANO 2021) Mangalam College of Engineering, Ettumanoor, Kottayam, Kerala, India. 29th & 30th April, 2021.DOI: 10.1109/5NANO51638.2021.9491128
N. Gupta, S. Singh, R. Chaujar and A. Kumar, “Static and Thermal Behaviour of Gate Electrode Workfunction Engineered Silicon Nanowire MOSFET for Temperature Tolerance Applications”, National E-Conference on Recent Advancements in Science and Technology (NECRAST 2020) 27th-28th July, ADGITM, New Delhi, 2020.
A. Kumar,U. Gupta, Tanya, andN. Gupta, “Simulation of Perovskite Solar Cell Employing ZnO as Electron Transport Layer (ETL) for Improved Efficiency”, Innovative Manufacturing, Mechatronics & Materials Forum 2020 (iM3F 2020)6^th August 2020, University Malaysia Pahang.
A. Kumar, S. Saini, A. Gupta, N. Gupta, M. M. Tripathi and R. Chaujar, "Sub-10 nm High-k Dielectric SOI-FinFET for HighPerformance Low Power Applications," 2020 6th International Conference on Signal Processing and Communication (ICSC), Noida, India, 2020, pp. 310-314, doi: 10.1109/ICSC48311.2020.9182748..
H. Yadav, A. Kumar Goyal and A. Kumar, "Design Analysis and Comparative Study of GDI Based Full Adder Design," 2020 6th International Conference on Signal Processing and Communication (ICSC), Noida, India, 2020, pp. 319-321, doi: 10.1109/ICSC48311.2020.9182726.
A. Kumar, P. Sood and U. Gupta, "Internet of Things (IoT) for Bank Locker Security System," 2020 6th International Conference on Signal Processing and Communication (ICSC), Noida, India, 2020, pp. 315-318, doi: 10.1109/ICSC48311.2020.9182713..
N. Gupta, A. Kumar, R. Chaujar, B. Kumar and M. M. Tripathi, "Gate Engineered GAA Silicon-Nanowire MOSFET for High Switching Performance," 2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS), Kolkata, India, 2020, pp. 258-262, doi: 10.1109/VLSIDCS47293.2020.9179932.
B. Kumar, A. Kumar and R. Chaujar, "The Effect of Gate Stack and High-ĸ Spacer on Device Performance of a Junctionless GAA FinFET," 2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS), Kolkata, India, 2020, pp. 159-163, doi: 10.1109/VLSIDCS47293.2020.9179855.
H. Soni, P. M. Tripathi, M. M. Tripathi, A. Kumar and R. Chaujar, "Thermal Reliability of GaN-BTG-MOSFET for High-Performance Applications in Integrated Circuits," 2020 IEEE 40th International Conference on Electronics and Nanotechnology (ELNANO), Kyiv, Ukraine, 2020, pp. 220-223, doi: 10.1109/ELNANO50318.2020.9088791.
A. Kumar,M. M. Tripathi and R. Chaujar, "Low-Temperature Reliability of Sub-20nm 4H-SiC Trench MOSFET with Black Phosphorus Gate Material," 2019 International Conference on Signal Processing and Communication (ICSC), NOIDA, India, 2019, pp. 296-299, doi: 10.1109/ICSC45622.2019.8938226..
A. Kumar, N. Gupta, S. Singh, B. Tiwari, M. M. Tripathi and R. Chaujar, "Carbon Nanotube Recessed Channel (CNT-RC) MOSFET for High Linearity/ULSI Applications," TENCON 2019 - 2019 IEEE Region 10 Conference (TENCON), 2019, pp. 2564-2567, doi: 10.1109/TENCON.2019.8929540.
A. Kumar, S. Srivastava and U. Gupta, "Internet of Things (IoT) Based Smart Shopping Centre Using RFID," 2019 International Conference on Signal Processing and Communication (ICSC), NOIDA, India, 2019, pp. 292-295, doi: 10.1109/ICSC45622.2019.8938369..
A. Kumar, M. Roy M. M. Tripathi, and R. Chaujar,“TCAD Analysis of Transparent Gate Thin Film Transistor (TFTs) for High Performance Applications”, International Conference on Photonics, Metamaterials and Plasmonics (PMP), JIIT Noida, India, 14^th to 16^th Feb 2019.https://doi.org/10.1063/1.5120917.
A. Kumar, N. Gupta,M. M. Tripathi, and R. Chaujar, “Non-Quasi-Static Small-Signal Modeling of TGRC MOSFET in Parameter Perspective for RF/Microwave Applications”, IEEE International Conference on Modern Circuits and Systems Technologies (MOCAST), Thessaloniki, Greece, 13^th to 15^th May 2019.DOI: 10.1109/MOCAST.2019.8742066.
A. Chhabra, A. Kumar and R. Chaujar, "Effect of Temperature on GaAs Junctionless FinFET Using High-κ Dielectric," 2019 3rd International conference on Electronics, Communication and Aerospace Technology (ICECA), Coimbatore, India, 2019, pp. 1434-1437, doi: 10.1109/ICECA.2019.8821826.
A. Kumar, S. K. Tripathi, N. Gupta, P. M. Tripathi and R. Chaujar, "GaN Silicon-on-Insulator (SOI) N-Channel FinFET for High-Performance Low Power Applications," 2019 IEEE 14th Nanotechnology Materials and Devices Conference (NMDC), Stockholm, Sweden, 2019, pp. 1-4, doi: 10.1109/NMDC47361.2019.9084011.
A. Kumar, N. Gupta, S. Singh, B. Tiwari, M. M. Tripathi and R. Chaujar, "Carbon Nanotube Recessed Channel (CNT-RC) MOSFET for High Linearity/ULSI Applications," TENCON 2019 - 2019 IEEE Region 10 Conference (TENCON), Kochi, India, 2019, pp. 2564-2567, doi: 10.1109/TENCON.2019.8929540..
A. Kumar,A. Chhabra and R. Chaujar, “GaAs Junctionless FinFET Using High-ᴋ Dielectric for High-Performance Applications”, 2018 IEEE 38th International Conference on Electronics and Nanotechnology (ELNANO-2018) , Igor Sikorsky Kyiv Polytechnic Institute. Kiev, 8-9, PP 126-129, Feb. 2018.DOI: 10.1109/ELNANO.2018.8477506.
A. Kumar, MM Tripathi, and R. Chaujar, “Sub-20nm In₂O₅Sn Gate Electrode Recessed Channel MOSFET for Bio-sensing Applications” ISFM 2018 Chandigarh, India.
A. Kumar, MM Tripathi, and R. Chaujar, “High-Temperature Reliability of Black Phosphorus Recessed Channel (BPRC) MOSFET” 7^th International Conference on Computing, Communication and Sensor Network (CCSN) 2018, 27-28 October, Kolkata India.
A. Kumar, MM Tripathi, and R. Chaujar, “TCAD Analysis of Sub-20 nm Black Phosphorus Trench (BP-T) MOSFET for High Temperature Applications” 7^th International Conference on Computing, Communication and Sensor Network (CCSN) 2018, 27-28 October, Kolkata India.
A. Kumar, M. M. Tripathi and R. Chaujar, "Linearity and Distortion Assessment of Black Phosphorus-Based Junctionless RC MOSFET," 2018 3rd IEEE International Conference on Recent Trends in Electronics, Information & Communication Technology (RTEICT), Bangalore, India, 2018, pp. 1649-1652, doi: 10.1109/RTEICT42901.2018.9012398..
A. Kumar, M. M. Tripathi and R. Chaujar, "Investigation of Different Gate Materials for Improved Device Performance in RC MOSFET," 2018 3rd IEEE International Conference on Recent Trends in Electronics, Information & Communication Technology (RTEICT), Bangalore, India, 2018, pp. 1653-1656, doi: 10.1109/RTEICT42901.2018.9012314..
A. Kumar, N. Gupta, MM Tripathi, and R. Chaujar, “Ultra-Sensitive Black Phosphorus Junctionless Recessed Channel MOSFET for Biosensing Application” 7^th International Conference on ‘Computing, Communication and Sensor Networks’, CCSN2018, October, 27th - 28th, 2018, Kolkata, W.B, India.
A. Kumar, N. Gupta, MM Tripathi, and R. Chaujar, “High-Temperature Reliability Assessment of Sub-20 nm Black Phosphorus Trench (BP-T) MOSFET” 7^th International Conference on ‘Computing, Communication and Sensor Networks’, CCSN2018, October, 27th - 28th, 2018, Kolkata, W.B, India.
A. Kumar, S. Singh, B. Tiwari and R. Chaujar, "Temperature Reliability of Junctionless Twin Gate Recessed Channel (JL-TGRC) MOSFET with Different Gate Material for Low Power Digital-Logic Applications," TENCON 2018 - 2018 IEEE Region 10 Conference, Jeju, Korea (South), 2018, pp. 1070-1074, doi: 10.1109/TENCON.2018.8650267.
A. Chhabra, A. Kumar and R. Chaujar, “GaAs Junctionless FinFET Using Si₃N₄ Spacer for High performance Analog Application”, 2018 International Conference On Advances in Communication and Computing Technology (ICACCT), pp 483-486, Pune, 8-9 Feb. 2018.DOI: 10.1109/ICACCT.2018.8529390.
A. Chhabra, A. Kumar and R. Chaujar, “GaAs Junctionless FinFET Using High-ᴋ Dielectric for Protein Sensing Application”, ISFM-2018, Chandigarh, India.
A. Kumar, MM Tripathi, and R. Chaujar^“Low Power, Highly Sensitive Nano-gap Embedded TGRC-MOSFET for the Detection of Neutral Biomolecules” 5^th International Conference on Bio-Sensing Technology Riva Del Garda, Italy (Elsevier) P-115. 7-10 May 2017.
A. Kumar, D. Kaur, M. M. Tripathi and R. Chaujar, "Reliability of high-k gate stack on transparent gate recessed channel (TGRC) MOSFET," 2017 International conference on Microelectronic Devices, Circuits and Systems (ICMDCS), Vellore, 2017, pp. 1-4, doi: 10.1109/ICMDCS.2017.8211533..
A. Kumar, A. Kumar, M. M. Tripathi and R. Chaujar, "Influence of interface trap charge density on reliability issues of transparent gate recessed channel (TGRC) MOSFET," 2017 International conference on Microelectronic Devices, Circuits and Systems (ICMDCS), Vellore, 2017, pp. 1-4, doi: 10.1109/ICMDCS.2017.8211538.
A. Kumar, S. Singh, B. Tiwari and R. Chaujar, "Twin gate rectangular recessed channel (TG-RRC) MOSFET for digital-logic applications," 2017 International conference on Microelectronic Devices, Circuits and Systems (ICMDCS), Vellore, 2017, pp. 1-4, doi: 10.1109/ICMDCS.2017.8211564.
A. Kumar, M. M. Tripathi and R. Chaujar, "Small-signal modeling of In2O5Sn based transparent gate recessed channel MOSFET for microwave/RF applications," 2017 IEEE Asia Pacific Microwave Conference (APMC), Kuala Lumpar, 2017, pp. 976-979, doi: 10.1109/APMC.2017.8251614.
A. Kumar, MM Tripathi, and R. Chaujar “Sub-20 nm Black Phosphorus Junctionless-Recessed Channel (BP JL-RC) MOSFET: A Low Power Device” IEEE International Conference on Nanotechnology for Instrumentation and Measurement (NANOfIM) 2017 Noida, pp. 17.
A. Kumar, S. Singh, B. tiwari, M.M. Tripathi and R. Chaujar, “Junctionless Double Gate Recessed Channel (JL-DGRC) MOSFET for Digital-Logic Applications”. International Conference on Nanotechnology for Instrumentation and Measurement (NANOfIM) 2017 Noida, pp. 227.
A. Kumar, MM Tripathi, and R. Chaujar, “Investigation of Novel Gate Materials on Recessed Channel (RC) MOSFET for High Performance Applications”pp. 402. ICN3I-2017, 6-8 Dec. IIT Roorkee.
R. Pandey, A. Jain, A. Kumar and R. Chaujar, “Impact of Minority Carrier Lifetime and Temperature on SiC Based Rear Contact SiGe Solar Cell for Concentrator Photovoltaic (CPV) Applications”, pp. 270-273, 32nd European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) Munich, 21-24 June 2016. ISBN:3-936338-41-8, DOI:10.4229/EUPVSEC20162016-1BV.6.45.
A. Kumar, N. Gupta and R. Chaujar, “Analysis of Small Signal Behaviour of Transparent Gate Recessed Channel (TGRC) MOSFET for High Frequency/RF Applications” Tech-Connect World Innovation Conference & Expo, pp. 193-195, June 14-17, 2015, Washington DC, USA. ISBN:978-1-4987-4730-1.
A. Kumar, N. Gupta and R. Chaujar, “Impact of Parameter Variation on the Hot-Carrier-Effect Immunity for Transparent Gate Recessed Channel (TGRC) MOSFET”, 2nd International Conference on Microelectronics, Circuits and Systems MICRO-2015, pp. 36-39, Kolkata, 11-12th July, 2015. ISBN: 81-85824-46-0.
A. Kumar,N. Gupta and R. Chaujar, “Highly Conductive ITO Based Transparent Gate Recessed Channel MOSFET for Improved RF Performance”, IWPSD-2015, Bangalore, 7-10 December 2015.PP.359.
N. Gupta, A. Kumar and R. Chaujar, “TCAD Analysis of Frequency Dependent Intrinsic and Extrinsic parameters of GEWE-SiNW MOSFET”, Tech-Connect World Innovation Conference & Expo, pp. 185-188, 14-17th June 2015, Washington DC, USA. DOI: 10.13140/RG.2.1.3867.6322.
N. Gupta, A. Kumar and R. Chaujar, “TCAD AC Analysis of Gate Electrode Workfunction Engineered Silicon Nanowire MOSFET for High Frequency Applications”, Tech-Connect World Innovation Conference & Expo, pp. 181-184, 14-17th June 2015, Washington DC, USA.
N. Gupta, A. Kumar and R. Chaujar, “Effect of Dielectric Engineering on Analog and Linearity performance of Gate Electrode Workfunction Engineered (GEWE) Silicon Nanowire MOSFET”, 15th International Conference on Nanotechnology, 27 - 30 July 2015, ROME (ITALY), pp. 928-931, DOI: 10.1109/NANO.2015.7388768.
N. Gupta, A. Kumar and R. Chaujar, “Gate Electrode Workfunction Engineered (GEWE) Silicon Nanowire (SiNW) MOSFET: A Solution for LNA at RF Frequency”, 2^ndInternational Conference on Microelectronics, Circuits and Systems MICRO-2015, Kolkata, pp. 52-56, 11-12th July, 2015. ISBN: 81-85824-46-0.DOI:10.13140/RG.2.1.2441.5209.
N. Gupta, A. Kumar and R. Chaujar, “Quantum Mechanical C-V Analysis of Gate Electrode Workfunction Engineered (GEWE) Silicon Nanowire MOSFET for HF Applications”, IWPSD-2015, Bangalore, 7-10 December 2015.PP.360.
A. Kumar, R. Chaujar and Monica “Thermal Behavior of Novel Transparent gate Recessed Channel (TGRC) MOSFET: TCAD Analysis” Tech-Connect World Innovation Conference & Expo, June 15-18, 2014, Washington DC, USA.
A. Kumar, R. Chaujar, and N. Gupta, “Novel Design: Transparent Gate Recessed Channel (TGRC) MOSFET for Improved Reliability Applications”, IEEE 1st International conference on Microelectronics, Circuits and Systems”, Kolkata, India, 2014, pp.1-5. ISBN: 81-85824-46-0.
A. Kumar, N. Gupta and R. Chaujar, “Intrinsic delay and power gain assessment of Transparent Gate Recessed Channel MOSFET for high performance RF/Wireless Applications, 3^rd International Conference NANOCON 014, Bharti Vidyapeeth Deemed University Pune, 14-15th October, 2014.
N. Gupta, A. Kumar and R. Chaujar, “Simulation analysis of Gate Electrode Workfunction Engineered (GEWE) Silicon Nanowire MOSFET for hot carrier reliability” IEEE 1st International Conference on Microelectronics, Circuits and Systems”, Kolkata, pp. 150-153, 11-13th July, 2014.
N. Gupta, A. Kumar and R. Chaujar, “Impact of Channel Doping and Gate Length on Small Signal Behaviour of Gate Electrode Workfunction Engineered Silicon Nanowire MOSFET at THz Frequency”, Fifth International Symposium on Electronic System Design, Mangalore, Karnataka, pp. 192-196, 15-17th December, 2014. doi 10.1109/ISED.2014.46.

MEMBERSHIPS

Senior Member IEEE.
IEEEmember of 5G Community.
IEEEmember of Electron Devices Society.
IEEEmember of Internet of Things Community.
IEEEmember of Smart Cities Community
OSA Member.
Life time member of Solar Society of India.

ACHIEVEMENTS

Editor of Journal- Nature, Scientific Report
Editor of Journal- Frontiers in Electronics
Editor of Journal- Frontiers in Nanotechnology
Book Editor: Wearable Technology - From Nature to Reality
Publisher: IntechOpen

Reviewer of Scientific Report, Nature.
Reviewer of IEEE Transactions on Electron Devices.
Reviewer of IEEE Transactions on Electron Devices Letter.
Reviewer of IEEE Transactions on Nanotechnology.
Reviewer of IEEE Transactions on Microwave Theory and Techniques.
Reviewer of IEEE Transactions on Device and Materials Reliability
Reviewer of IEEE Access.
Reviewer of Microelectronics Journal, Elsevier.
Reviewer of Microelectronics Reliability, Elsevier.
Reviewer of AEÜ - International Journal of Electronics and Communications, Elsevier.
Reviewer of Optical Materials, Elsevier.
Reviewer of Applied Surface Science, Elsevier.
Reviewer of Silicon, Nature Springer.
Reviewer of SN Applied Sciences, Nature Springer.
Reviewer of Journal of Nanostructure in Chemistry, Nature Springer.
Reviewer of Semiconductor Science and Technology, IOP.
Reviewer of Journal of Semiconductor, IOP.
Reviewer of Journal of Physics-D, IOP.
Reviewer of Advances in Natural Sciences: Nanoscience and Nanotechnology, IOP.
Reviewer of International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, John Wiley & Sons, Ltd.
Reviewer of International Journal of Electronics Letters, Taylor and Francis.
Reviewer of Symmetry, MDPI.
Reviewer of Materials, MDPI.
Reviewer of Electronics, MDPI.
Reviewer of Crystals, MDPI.
Reviewer of Energies, MDPI.
Reviewer of Internation journal of Material Research (IJMR), De Gruyter.
Reviewer of ECS Journal of Solid State Science and Technology, Electrochemical Soc Inc.
Reviewer of Journal of Circuits, System, and Computers, World Scientific.
Reviewer of IETE Journal of Research.
Reviewer of International journal of Nano Dimension.
Session chairin Asia Pacific Microwave Conference (APMC) 2017 in Kuala Lumpur, Malaysia.
Receive commendable research excellent award in 2018, presented by Delhi Technological University.
Receive commendable research excellent award in 2019, presented by Delhi Technological University.
Receive commendable research excellent award in 2020, presented by Delhi Technological University.
Receive commendable research excellent award in 2021, presented by Delhi Technological University.
Receive commendable research excellent award in 2022, presented by Delhi Technological University.
Receive commendable research excellent award in 2023, presented by Delhi Technological University.
CBSE-NET JRF qualified December 2015.
UGC-NET qualified December 2013.
UGC-NET qualified June 2014.
CBSE-NET qualified December 2014.
CBSE-NET qualified June 2015
GATE qualified in 2012.

GOOGLE SCHOLAR LINK

https://scholar.google.co.in/citations?user=mlqqsDAAAAAJ&hl=en